Mott gap engineering in Sr2IrO4/SrTiO3 superlattices

Engineering the oxygen coordination in digital superlattices

Dipole-allowed direct band gap silicon superlattices

Silicon is the most popular material used in electronic devices. However, its poor optical properties owing to its indirect band gap nature limit its usage in optoelectronic devices. Here we present the discovery of super-stable pure-silicon superlattice structures that can serve as promising materials for solar cell applications and can lead to the realization of pure Si-based optoelectronic d...

Double hole cyclotron resonance in zero-gap HgTe-CdTe superlattices.

Terahertz band-gap in InAs/GaSb type-II superlattices

We demonstrate theoretically that it is possible to realize terahertz (THz) fundamental band-gap between the electron mini-band in the InAs layer and the heavy-hole mini-band in the GaSb layer in InAs/GaSb based type II superlattices (SLs). The THz band-gap can be tuned by varying the sample growth parameters such as the well widths of the InAs and/or GaSb layers. The presence of such band-gap ...

Electron interactions and gap opening in graphene superlattices.

We develop a theory of interaction effects in graphene superlattices, where tunable superlattice periodicity can be used as a knob to control the gap at the Dirac point. Applied to graphene on hexa-boron-nitride (G/h-BN), our theory predicts substantial many-body enhancement of this gap. Tunable by the moiré superlattice periodicity, a few orders of magnitude enhancement is reachable under opti...